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TOSHIBA
TOSHIBA
MG200Q1US51 IGBT
TOSHIBA TOSHIBA
描述
TOSHIBA MG200Q1US51 IGBT
Insulated Gate Bipolar Transistor; 1200V Collector-Emitter Voltage; 20V Gate-Emitter Voltage; 1500W Collector Power Dissipation; GTR Module Silicon N Channel; 150 Degree C Junction Temperature; 2500V Isolation Voltage; -40 to 125 Storage Temperature
制造商部件号
MG200Q1US51 IGBT
BDI部件号
25100331
详情
2099-12-31
http://schema.org/NewCondition
https://schema.org/LimitedAvailability
https://www.bdiexpress.com/cn/zh/Categories/%E7%94%B5%E5%99%A8%E4%BA%A7%E5%93%81/%E4%BF%9D%E9%99%A9%E4%B8%9D-%E6%96%AD%E8%B7%AF%E5%99%A8/MG200Q1US51-IGBT/p/25100331
单价(不含税)
请求报价
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产品详细信息
分类
最低订购量
无
重量 / Kilogram
0.2
Product Group - BDI
E02260
名称
Transistor
关键字串
Bipolar Insulated Gate
产品明细
Insulated Gate Bipolar Transistor
产品规格
1200V Collector-Emitter Voltage; 20V Gate-Emitter Voltage; 1500W Collector Power Dissipation; GTR Module Silicon N Channel; 150 Degree C Junction Temperature; 2500V Isolation Voltage; -40 to 125 Storage Temperature
详细描述
Insulated Gate Bipolar Transistor; 1200V Collector-Emitter Voltage; 20V Gate-Emitter Voltage; 1500W Collector Power Dissipation; GTR Module Silicon N Channel; 150 Degree C Junction Temperature; 2500V Isolation Voltage; -40 to 125 Storage Temperature
